Image Sensor Technology
Wober Tech Inc. (WTI) has developed groundbreaking technologies to revolutionize the CMOS image sensor technology. Our solid-state multispectral Si nanostructured system will take multispectral imaging everywhere.
CMOS Integrated
We leverage traditional standard CMOS fabrication facilities to construct multispectral sensors with EUV to NIR range (10nm-1000nm). Our technology can be extended to 2.5-micron wavelength photodiode arrays using other semiconductors.
Value Proposition
CHALLENGE
Traditional RGB CMOS image sensors are one area yet to be disrupted that is lagging behind other CMOS integrated circuits in scalability and capability. Many companies and startups are trying to expand a CMOS sensor beyond RGB but are failing to do so because of:
- Large-Form Factors
- Limited Multispectral Range
- Excessive Power Consumption
- Pixel Density
PROBLEM
These companies are utilizing traditional CMOS technologies with very thin epi layers, pigment dyes, anti-reflective coatings, and deep trenches to reduce pixel cross-talk, as well as micro-lenses that don’t scale well with standard CMOS technology, which is a barrier to multispectral or Beyond RGB imaging.
SOLUTION
As an immediate disruptor, WTI is utilizing a technique never used before to create a single layer of Si nanostructured photodiode array built on top of a CMOS readout circuit to create a nanostructured CMOS image sensor (NCIS).
Challenge
Traditional RGB CMOS image sensors are one area yet to be disrupted that is lagging behind other CMOS integrated circuits in scalability and capability. Many companies and startups are trying to expand a CMOS sensor beyond RGB but are failing to do so because of:
- Large-Form Factors
- Limited Multispectral Range
- Excessive Power Consumption
- Pixel Density
Solution
As an immediate disruptor, WTI is utilizing a technique never used before to create a single layer of Si nanostructured photodiode array built on top of a CMOS readout circuit to create a nanostructured CMOS image sensor (NCIS).
Our Differentiators
Traditional CMOS sensors were developed in the 1980s, but our nanostructured construct is a paradigm shift providing competitive solid advantages. We are pioneers in nanostructured materials applied to photonics. Nanostructured materials have:
- Different Physical Properties than Bulk Ones
- Different Optical, Thermal, Mechanical, and Electronic Properties
Our product is a game-changer in the field of CMOS image sensors. With our technology, we can overcome the limitations of traditional CMOS sensors and provide a multispectral imaging solution that is scalable, efficient, and cost-effective.
- Beyond RGB: Many bands in 10nm-1000nm. It can also deliver RGB tailored to authentic human color vision (i.e., non-metameric).
- AI Enabled multispectral sensing and detection
- No Need for Micro Lenses or Anti-Reflective Coatings: Our multispectral filter is built with Si nanowires that do not require traditional microlenses or anti-reflective coatings within the CMOS chip.
- Greater Quantum Efficiency: In a traditional CMOS and CCD image sensor, only one quarter of the red or blue light and one half of the green light that falls on a bayer pattern macropixel is utilized. WTI technology uses virtually all the light that falls on the macropixel.
- Ultra-Low Power Consumption: The power consumption is minimal because it’s a solid-state monolithic system, and our dopant free photodiodes can operate at zero bias.
- No Need for Pigment Dyes: Eliminates cross-talk and cross-contamination of colors amongst different spectral band pixels, is scalable with CMOS, and is relatively insensitive to the incidence angle of incoming light.
- Greater Pixel Density: Nanostructures allow deep sub-micron pixel pitch, leading to much greater pixel density with the pixel size limited only by the readout circuit noise.
The Fundamental Discovery
Semiconductor nanowires possess unique properties that make them ideal for multispectral photodetection at the nanoscale, leading to breakthrough downward pixel size scaling. Here are some of the key features of semiconductor nanowires:
- Light Guidance: Semiconductor nanowires guide light, eliminating cross-talk between adjacent bands.
- Light Filtering: They filter light based on morphology and tessellation, eliminating the need for pigment-based filters.
- No Light Reflection: Semiconductor nanowires do not reflect light, resulting in higher quantum efficiency.
- High Efficiency: They convert light to current with very high efficiency, thereby detecting it.
- Nanoscale Detection: All of this is done at the nanoscale.
- Spectrometer-Like Functionality: Light is split and shared as in a spectrometer. In a macro pixel that may contain 3-9 bands, light is split and detected but not absorbed or reflected as in traditional pigment-based image sensors.
Our Differentiators
Traditional CMOS sensors were developed in the 1980s, but our nanostructured construct is a paradigm shift providing competitive solid advantages. We are pioneers in nanostructured materials applied to photonics. Nanostructured materials have:
- Different Physical Properties than Bulk Ones
- Different Optical, Thermal, Mechanical, and Electronic Properties
Our product is a game-changer in the field of CMOS image sensors. With our technology, we can overcome the limitations of traditional CMOS sensors and provide a multispectral imaging solution that is scalable, efficient, and cost-effective.
- Beyond RGB: Many bands in 10nm-1000nm. It can also deliver RGB tailored to authentic human color vision (i.e., non-metameric).
- No Need for Micro Lenses or Anti-Reflective Coatings: Our multispectral filter is built with Si nanowires that do not require traditional microlenses or anti-reflective coatings within the CMOS chip.
- Greater Quantum Efficiency: Traditional RGB CMOS sensors absorb ~50% of light. Our sensor absorbs >90%.
- Ultra-Low Power Consumption: The power consumption is minimal because it’s a solid-state monolithic system, and our photodiodes can operate at zero bias.
- No Need for Pigment Dyes: Eliminates cross-talk and cross-contamination of colors amongst different spectral band pixels, is scalable with CMOS, and is relatively insensitive to the incidence angle of incoming light.
- Greater Pixel Density: Nanostructures allow deep sub-micron pixel pitch, leading to much greater pixel density with the pixel size limited only by the readout circuit noise.
The Fundamental Discovery
Semiconductor nanowires possess unique properties that make them ideal for multispectral photodetection at the nanoscale, leading to breakthrough downward pixel size scaling. Here are some of the key features of semiconductor nanowires:
- Light Guidance: Semiconductor nanowires guide light, eliminating cross-talk between adjacent bands.
- Light Filtering: They filter light based on morphology and tessellation, eliminating the need for pigment-based filters.
- No Light Reflection: Semiconductor nanowires do not reflect light, resulting in higher quantum efficiency.
- High Efficiency: They convert light to current with very high efficiency, thereby detecting it.
- Nanoscale Detection: All of this is done at the nanoscale.
- Spectrometer-Like Functionality: Light is split and shared as in a spectrometer. In a macro pixel that may contain 3-9 bands, light is split and detected but not absorbed or reflected as in traditional pigment-based image sensors.